Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology
碩士 === 長庚大學 === 電子工程研究所 === 94 === This thesis proposes three circuits and they are designed, implemented, and measured. These circuits include two complementary simplified cross–coupled VCOs and a self–oscillating mixer fabricated in TSMC 0.18 μm 1P6M CMOS process. The Ku–band oscillator at the cen...
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ndltd-TW-094CGU006860112015-10-13T10:37:50Z http://ndltd.ncl.edu.tw/handle/67194518497801317422 Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology 次微米金氧半場效電晶體製作之新型壓控振盪器與高效能自振式混波器 Chih-Hsiang Peng 彭志翔 碩士 長庚大學 電子工程研究所 94 This thesis proposes three circuits and they are designed, implemented, and measured. These circuits include two complementary simplified cross–coupled VCOs and a self–oscillating mixer fabricated in TSMC 0.18 μm 1P6M CMOS process. The Ku–band oscillator at the center frequency of 15 GHz associated with about –5 dBm output power. Measured phase noise is –103.11 dBc/Hz at 1 MHz offset. The Ku–band VCO achieves the FOM of –178.2 dBc/Hz. The dual–band VCO core draws 2 mA of current from 1.5 V power supply voltage. Measured phase noise at 1 MHz offset is –117.94 dBc/Hz and –111.09 dBc/Hz in the 2.14 GHz and 4.5 GHz band. The dual–band VCO achieves FOMs of –179.8 and –179.4 dBc/Hz, respectively. The conversion gain of the self–oscillating mixer (SOM) is about 6 dB at 9.2 GHz RF frequency. Measured LO phase noise is –135.6 dBc/Hz at 1 MHz offset. The SOM achieves the FOM of –198.609 dBc/Hz. Yi-Chyun Chiang 江逸群 2006 學位論文 ; thesis 50 zh-TW |
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碩士 === 長庚大學 === 電子工程研究所 === 94 === This thesis proposes three circuits and they are designed, implemented, and measured. These circuits include two complementary simplified cross–coupled VCOs and a self–oscillating mixer fabricated in TSMC 0.18 μm 1P6M CMOS process.
The Ku–band oscillator at the center frequency of 15 GHz associated with about –5 dBm output power. Measured phase noise is –103.11 dBc/Hz at 1 MHz offset. The Ku–band VCO achieves the FOM of –178.2 dBc/Hz. The dual–band VCO core draws 2 mA of current from 1.5 V power supply voltage. Measured phase noise at 1 MHz offset is –117.94 dBc/Hz and –111.09 dBc/Hz in the 2.14 GHz and 4.5 GHz band. The dual–band VCO achieves FOMs of –179.8 and –179.4 dBc/Hz, respectively. The conversion gain of the self–oscillating mixer (SOM) is about 6 dB at 9.2 GHz RF frequency. Measured LO phase noise is –135.6 dBc/Hz at 1 MHz offset. The SOM achieves the FOM of –198.609 dBc/Hz.
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Yi-Chyun Chiang |
author_facet |
Yi-Chyun Chiang Chih-Hsiang Peng 彭志翔 |
author |
Chih-Hsiang Peng 彭志翔 |
spellingShingle |
Chih-Hsiang Peng 彭志翔 Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology |
author_sort |
Chih-Hsiang Peng |
title |
Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology |
title_short |
Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology |
title_full |
Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology |
title_fullStr |
Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology |
title_full_unstemmed |
Novel Voltage-Controlled Oscillators and High Performance Self-Oscillating Mixer Constructed with CMOS Technology |
title_sort |
novel voltage-controlled oscillators and high performance self-oscillating mixer constructed with cmos technology |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/67194518497801317422 |
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