Characteristics of Transparent Conducting ZnO:Al Thin Films Prepared by Reactive RF Magnetron Sputtering
碩士 === 正修科技大學 === 電子工程研究所 === 94 === In this study, the reactive rf magnetron sputtering was used to deposit Aluminum-doped zinc oxide (AZO) thin films on corning 7059 glass substrate at room temperature. The thermal treatment procedure was carried out to improve the electrical characteristics and o...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39267349818850566609 |
| Summary: | 碩士 === 正修科技大學 === 電子工程研究所 === 94 === In this study, the reactive rf magnetron sputtering was used to deposit Aluminum-doped zinc oxide (AZO) thin films on corning 7059 glass substrate at room temperature. The thermal treatment procedure was carried out to improve the electrical characteristics and optical characteristics of AZO thin films. The physical characteristics of AZO thin films with different post annealing process were obtained by the analyses of XRD and SEM. The conductivity properties of AZO thin films with different post annealing process were obtained by the analyses of four-point probe method. In optical properties, the Ultraviolet Visible Spectrometer(UV-Vis) was used to measure the optical transmittance and the band gap.
According to the results of experiments, the states of AZO thin films were changed after different post annealing. In vacuum at annealing temperatures below tc=500℃ can obtain a minimum resistivity of 1.63 × 10-2 Ω-cm and a maximum band gap of 3.38eV. The average transmission in the visible range was 85%.
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