The Studies of Hall Effect in YBa2Cu3O7-y Thin Films with Asymmetrically Artifical Flux Pinning Array

• Main Authors: Chih-Chian Guo, 郭致謙
• Other Authors: L.M. Wang
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/50523620950643440502

碩士 === 大葉大學 === 電機工程學系碩士班 === 94 === We were successfully grown High-Tc superconductor YBa2Cu3O7-y(YBCO) thin films on SrTiO3(STO) substrates by using RF magnetro sputtering. We used the photolithography、electron beam writing and ion etching techniques to fabricate the thin film for Hall pattern with 20 μm width mircobridge. We fabricated YBCO microstrip lines with a asymmetric anti-dot(array lattice parameters of a = 2 μm and b = 4 μm)and Ni-dot (array lattice parameters of a = 1 μm and b = 2 and 3 μm) arrays. The mixed-state Hall effects were measured. In the asymmetric anti-dot array, we can find that the pinning potential energy is larger when the current was applied along the b axis, corresponding to a maximum negative Hall resistivity was observed. In the asymmetric Ni dot array, we can find that the pinning potential energy is larger when the current was applied along the a axis, corresponding to a maximum negative Hall resistivity was observed. The experimental results can be discussed and explained within the theories of the flux creep model and Wang and Ting’s model.