| Summary: | 碩士 === 明新科技大學 === 化學工程研究所 === 94 === Since carbon nanotubes (CNTs ) were discovered, relevant research fever and developments of commercial applications such as hydrogen storage, atomic force microscope probe, microelectronic transistor, electrical field emitter of flat panel display and scanning tunneling microscope tip have been stimulated tremendously. High-quality and well-aligned carbon nanotubes are essential to the potential applications in the field of microelectronic industries. Thermal chemical vapor deposition has been regarded as the potential method of mass production because of carbon nanotubes can grow at atmosphere, equipment simplicity.
The composition of gas reactants significantly affects the reaction mechanism of carbon nanotubes growth. In the thesis, carbon nanotubes were grown on the various substrates, such as Si substrate, carbon cloth and patterned Si substrate by thermal chemical vapor deposition using CH4 and CO2 gas mixtures. This is apparently different from the conventional reaction in gas mixtures of hydrogen and methane, ammonia and acetylene, hydrogen and acetylene, and hydrogen and benzene, etc. CH4-CO2 gas system can increase the amount of carbon. In the carbon-rich gas ambient will be beneficial to graphite deposition, and enhance carbon nanotubes synthesis on catalyst-deposited surface quality. A various growth condition of CNT. will be studied then a high quality, high growth rate, and low temperature process will be anticipated. An atomic C-H-O carbon nanotubes deposition phase diagram with the graphite domain have been investigated and compared with Bachmann model. FTIR was used to identify the functional groups of carbon nanotube.
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