Fabrication and characterization of GaN Light-Emitting Diodes with metallic substrates
碩士 === 國立中興大學 === 材料工程學系所 === 94 === Group III nitride compound semiconductors have been widely used in optoelectronics and high-temperature electronic devices because of their wide band gap, chemical stability, and high temperature stability. These devices have been used extensively in various appl...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/81186388210577067137 |