Fabrication and characterization of GaN Light-Emitting Diodes with metallic substrates
碩士 === 國立中興大學 === 材料工程學系所 === 94 === Group III nitride compound semiconductors have been widely used in optoelectronics and high-temperature electronic devices because of their wide band gap, chemical stability, and high temperature stability. These devices have been used extensively in various appl...
Main Authors: | Yi-Feng Lin, 林義豐 |
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Other Authors: | 武東星 |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/81186388210577067137 |
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