The growth and characterization of gallium nitride nanowires

• Main Authors: Yu-Hsueh Chien, 簡玉雪
• Other Authors: Chau-Nan Hong
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/8wncue

碩士 === 國立成功大學 === 化學系專班 === 94 === Nitrogen atoms are ionized or excited by dielectric barrier discharge (DBD) to form a horizontal furnace system with nitrogen plasmas. By Vapor-Liquid-Solid(VLS) mechanics gallium atoms and nitrogen radicals form gallium nitride nanowires with high quality and high production. The substrate we use to grow GaN nanowires is silicon wafer. By SEM morphology we found that the growth rate of GaN nanowires in plasma system was very fast. Only 10 minutes reaction time, the length of GaN nanowires had grown to nanometer order. Besides, the diameter is very small and the production is high. Most of crystals are wurtzite structure by X-ray and TEM analysis and the growth direction is [100]. SEM images showed the high production and the long length of these GaN nanowires. The PL measurement revealed that the zinc blend structure of GaN nanowires could form in the low substrate temperature. When substrate temperature increased to 910C, the PL peak position had blue shift from 3.2eV to 3.35eV. This information suggested that the wurtzite structure GaN nanowires were easily existed in the high substrate temperature.