The study and fabrication of large-area vertical-structured GaN-based high power light-emitting diodes with a transparent-conducting Indium-Zinc Oxide layer
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === In the mid-1990s, nitride-based material was first successfully grown on sapphire by Shuji Nakamura of Nichia co. using Metal Organic Chemical vapor deposition (MOCVD) technology. Up to now, lots efforts have been made in the promotion of light extraction an...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59727857015182599253 |