Investigation of TiO2 Oxide on GaN Prepared by Liquid Phase Deposition
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === TiO2 oxide has been deposited on GaN material through the liquid phase deposition method (LPD) which provides a low-cost and low-complex method in forming oxide layers at room temperature. The deposition rate is about 40nm/hr. Augar electron spectroscopy (AE...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12877718825988286565 |