| Summary: | 碩士 === 國立成功大學 === 電機工程學系碩博士班 === 94 === The industry of integrated circuit (IC) semiconductor started at the middle of twenty century and grows fast at the second half century. The capacity of the IC industry exceeds the consumption of the market at the end of twenty century. The cycle time of a product getting shorter compresses the profile. Especially the vertical division of semiconductor industry decreases the barrier of entry. The time-to-market becomes critical to the profit. The design and manufacturing period with computer-aided automation are well controlled and very precisely, but yield rate of the first cut always get low yield. This violently extends the time-to-market, reduces profit or even losses money. The low yield may comes from design, manufacturing or interaction of both and almost induced by high resistance or leakage circuit. Failure analysis to identify the cause of high resistance and leakage plays a significant role to improve the yield.
The failure analysis technologies, liquid crystal microscopy, fluorescent micro-thermal microscopy, emission microscopy, thermal beam induced current variation, and passive voltage contrast are used to locate the failure site. Several real cases are demonstrated in this thesis to discuss the possible failure mechanism and find out the defect, in order to compare these failure analysis technologies.
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