Apply Taguchi Method To Improve The Deep Trench Process of Dynamic Random Access Memory

• Main Authors: Kun-Shu Sung, 宋崑樹
• Other Authors: Yung-Chia Chang
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/13710962369122226864

碩士 === 國立交通大學 === 管理學院碩士在職專班工業工程與管理組 === 94 === The semiconductor industry is a fund concentrated industry. Take the DRAM (Dynamic Random Access Memory) factory as an example, reducing defects in the manufacturing process to gain 1% yield increase could result in at least ten million NT dollars in profit. Therefore, yield is a key index for any semiconductor factory. The manufacture process of DRAM is very complicated. Among those close to five hundreds process steps, deep trench process is a technical core. There has found no related literature in discussing the causes and solutions to defects due to the insufficient BSG remainder in the deep trench process. This research aims to find out the key control factors related to the insufficient BSG remainder in deep trench process. Taguchi Method is then applied to investigate and to find out a good recipe to each quality characteristic for the process. A trade-off method based on standardized signal to noise ratio (S/N ratio) is used to get an acceptable recipe when considering optimizing multiple quality characteristics simultaneously, A real case from one DRAM manufacture was studied. It is shown that defects were reduced in the deep trench process after applying the suggested recipe by this research. .