| Summary: | 碩士 === 國立交通大學 === 光電工程系所 === 94 === One novel electrode-architecture has been adapted to fabricate transparent organic thin-film transistors (OTFTs). Due to the high injection barrier of the indium-tin-oxide (ITO)/pentacene interface, the device exhibited a non-ideal behavior. After the modification of the contact by inserting a thin-layer of one metal oxide (MoO2 or V2O5), the device performance was improved dramatically. By using the novel electrode architecture, an OTFT with more than 60 % transmittance in the visible region has been demonstrated.
In addition, the transmittance was further improved by reducing the thickness of the semiconducting layer, which has been identified as the main component absorbing the visible light in the devices. Comparable device performance was still obtained, even though the thickness of pentacene was reduced to 200Å. As a result, one OTFT with over 70% transmittance has been demonstrated successfully. It is anticipated that the transparent OTFTs would be very suitable to be the driving circuits for liquid crystal displays (LCDs).
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