Parameters Study of Grown Carbon Nanotubes using Different Buffer Layer by Thermal CVD
碩士 === 國立交通大學 === 工學院碩士在職專班精密與自動化工程學程 === 94 === This thesis mainly devoted to study the growth of the carbon nanotubes (CNTs) using different buffer layers include TiN、TaN and SiO2. In the experiment, nickel was act as catalyst for grown CNTs. The nanostructures have been synthesized from hydrocarb...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30980725156848685794 |
| Summary: | 碩士 === 國立交通大學 === 工學院碩士在職專班精密與自動化工程學程 === 94 === This thesis mainly devoted to study the growth of the carbon nanotubes (CNTs) using different buffer layers include TiN、TaN and SiO2. In the experiment, nickel was act as catalyst for grown CNTs. The nanostructures have been synthesized from hydrocarbon from the mixture of methane and ethylene by thermal chemical vapor deposition. The effect of experimental parameters on the growth characteristics of CNTs were evaluated by Scanning Electron Microscope (SEM). The qualities of CNTs were measured by Raman spectroscope and the characteristic of carbon lattice was analyzed using Transmission Electron Microscope (TEM). The experimental results show that the size of the catalyst and the quality of CNTs can be controlled by appropriate pretreatments. The CNTs were non-aligned grown by Thermal-CVD due to the Van der Waals forces and steric hindrance, which were elevated the defect at the microstructure. The relationship between of CNTs and the catalyst were demonstrated by TiN and TaN buffer layers at low-temperature (450~500). TiN or TaN buffer layer can act an important roles to decrease process temperature and use as barrier to avoid diffusion between catalyst and silicon substrate.
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