Conjugated Polymer Hot Carrier Transistor
碩士 === 國立交通大學 === 物理研究所 === 94 === In recent years,the field of researching conjugated polymer is very hot .However the main transistor is still based on MOSFET.Fabricating MOSFET takes expensive photolithography instrument to improve its output characteristics.And the organic is confined by the pro...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/60477557519636796325 |
id |
ndltd-TW-094NCTU5198005 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-094NCTU51980052016-05-27T04:18:34Z http://ndltd.ncl.edu.tw/handle/60477557519636796325 Conjugated Polymer Hot Carrier Transistor 共軛高分子熱載子電晶體 Lin,Ying-Chang 林盈璋 碩士 國立交通大學 物理研究所 94 In recent years,the field of researching conjugated polymer is very hot .However the main transistor is still based on MOSFET.Fabricating MOSFET takes expensive photolithography instrument to improve its output characteristics.And the organic is confined by the properties of materials.It takes more money than inorganic MOSFET to mprove output characteristics.Unlike MOSFET,our SMS sandwich structure transistor can overcome these disadvantages and still has advantages like easy process,low cost,and high speed. . . etc. In 2005,our lab has already published the initial results of SMS structure on APL.The current gain(β) is up to 25 at 5V.The next work is to increase the stability of devices and the current gain.In order to reach this goal,we make some changes on the structure.Up to now,the stability has been improved but the current gain is still low.The highest value is 1.55.There maybe some problems in metal/polymer interface to be solved.I believe that these problems will be solved and current will be much higher in the near future. Keywords:SMS,polymer,current gain,β Hsin-Fei Meng 孟心飛 2006 學位論文 ; thesis 45 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立交通大學 === 物理研究所 === 94 === In recent years,the field of researching conjugated polymer is very hot .However the main transistor is still based on MOSFET.Fabricating MOSFET takes expensive photolithography instrument to improve its output characteristics.And the organic is confined by the properties of materials.It takes more money than inorganic MOSFET to mprove output characteristics.Unlike MOSFET,our SMS sandwich structure transistor can overcome these disadvantages and still has advantages like easy process,low cost,and high speed. . . etc.
In 2005,our lab has already published the initial results of SMS structure on APL.The current gain(β) is up to 25 at 5V.The next work is to increase the stability of devices and the current gain.In order to reach this goal,we make some changes on the structure.Up to now,the stability has been improved but the current gain is still low.The highest value is 1.55.There maybe some problems in metal/polymer interface to be solved.I believe that these problems will be solved and current will be much higher in the near future.
Keywords:SMS,polymer,current gain,β
|
author2 |
Hsin-Fei Meng |
author_facet |
Hsin-Fei Meng Lin,Ying-Chang 林盈璋 |
author |
Lin,Ying-Chang 林盈璋 |
spellingShingle |
Lin,Ying-Chang 林盈璋 Conjugated Polymer Hot Carrier Transistor |
author_sort |
Lin,Ying-Chang |
title |
Conjugated Polymer Hot Carrier Transistor |
title_short |
Conjugated Polymer Hot Carrier Transistor |
title_full |
Conjugated Polymer Hot Carrier Transistor |
title_fullStr |
Conjugated Polymer Hot Carrier Transistor |
title_full_unstemmed |
Conjugated Polymer Hot Carrier Transistor |
title_sort |
conjugated polymer hot carrier transistor |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/60477557519636796325 |
work_keys_str_mv |
AT linyingchang conjugatedpolymerhotcarriertransistor AT línyíngzhāng conjugatedpolymerhotcarriertransistor AT linyingchang gòngègāofēnzirèzàizidiànjīngtǐ AT línyíngzhāng gòngègāofēnzirèzàizidiànjīngtǐ |
_version_ |
1718282563883106304 |