A Study of Drive Current Enhancement Methods and Related Reliability Issues for MOSFETs
博士 === 國立交通大學 === 電子工程系所 === 94 === In this thesis, we have investigated the impacts of silicon nitride (SiN) capping layer on drive current and the associated reliability issues. In addition, novel SOI devices were also fabricated and characterized in this study. This study includes the fabrication...
Main Authors: | Chia-Yu Lu, 呂嘉裕 |
---|---|
Other Authors: | Horng-Chih Lin |
Format: | Others |
Language: | en_US |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/33162682263092973012 |
Similar Items
Similar Items
-
Fabrication and Development of Schottky Source/Drain SOI MOSFET
by: Chia-Yu Lu, et al.
Published: (2001) -
Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs
by: Suvendu Nayak, et al.
Published: (2021-01-01) -
The Impact of the Shallow Trench Isolation on the Reliability of Trigate MOSFET
by: Wu, Chia-Wei, et al.
Published: (2015) -
A Study on Characteristics and Reliability Issues of Strained Channel MOSFETs with SiN Capping
by: Lu, Ching-Sen, et al.
Published: (2008) -
Investigation of Hot Carrier Reliability Issues in STI and Strained-Silicon MOSFET's
by: Chang Hua Yeh, et al.
Published: (2004)