An Improved Analytical Approach On TheDetermination of HBT’s Small-Signal Pi Modeling
碩士 === 國立交通大學 === 電子工程系所 === 94 === This thesis details the derivation procedure used in determining HBT’s small-signal parameters where Pi model is employed. With close-form expressions for the transistor’s external base-collector capacitor and its base spreading resistor now developed, an improved...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/06636807954019196069 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 94 === This thesis details the derivation procedure used in determining HBT’s small-signal parameters where Pi model is employed. With close-form expressions for the transistor’s external base-collector capacitor and its base spreading resistor
now developed, an improved approach for determining HBT’s small-signal Pi model is thus proposed. Since only one additional test structure is needed to find out the contact pads’ parasitics, this revised analytical approach is simple, yet efficient.
|
|---|