| Summary: | 碩士 === 國立交通大學 === 顯示科技研究所 === 94 === In this thesis, two architectures are proposed for fabricating the organic thin film transistors (OTFTs). One is the Vertical Organic Thin Film Transistor (VOTFT). In the proposed process and structure, with the simply photo-aligner and shadow mask, the short-channel VOTFTs are achieved. According to the output characteristics of VOTFTs, the unsaturated drain current is observed. A Fowler-Nordheim tunneling transportation dominates the carrier transport in VOTFTs. To further improve VOTFT property and gate-control ability, the source electrode is modified as the mesh-like shape. In the modified VOTFTs, the drain voltage is significant reduced (less then 5V), and the on/off current ratio is also increased from 102 to 104.
Secondly, the proposed structure is TBC-OTFTs (Top-Bottom Contact OTFT). It is similar the VOTFTs but the Source/Drain electrodes are not overlapped. Fabricated by shadow-mask only, the TBC-OTFTs show better performance than the bottom-contact OTFT. To further study the current transport in the TBC-OTFTs, the resistance-analysis is introduced to model the proposed structure. With the combination of the contact resistance, the vertical resistance, the film resistance, and the Schottky-like resistance, the constructed model is plotted as the function of gate-voltage. Comparing the modeling result to the experimental plot, it is founded that the experiment data is good agreed with the proposed model.
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