The study of the Ion Beam induced the topography and the oxidation of silicon

• Main Authors: Chin-Shun Yu, 余錦順
• Other Authors: Shyong Lee, C.S.Lee
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/hcj9c8

碩士 === 國立中央大學 === 機械工程研究所 === 94 === The Ion Beam applied to the material is mainly divided into two aspects. The Ion Beam Synthesis is the new technology which includes the Ion Beam and Physical of Chemical Vapor Deposition. Ion Beam Assisted Deposition (IBAD) and Ionized Cluster Beam (ICB) has been developed since 1970s. On the other hand, ions with the different energy is implanted into the material surface layer in order to achieve the improvement of the properties of the material surface. In the development of IC technology, oxide’s main achievement is the gate extreme insulation. After the component is insulated, the gate voltage may switch off the control channel, and Carries can’t be lost between source and drain. Therefore, the quality of insulation affects the properties. There are many methods of coating technology and there will be impurity in the CVD and the defect caused by residual stress from the high temperature in the process of thermal oxidation. In order to remove the high temperature and impurity, this paper will discuss the method of bombarding silicon with different beam currents in oxygen environment to produce the oxidized thin film, using Ion Beam System in the high vacuum with the pressure of 5 10-8 Torr in pure environment.