Effect of underlying metals and emitter patterns on the field emission properties of CNT diode devices

• Main Authors: Jen-Hao Hsu, 許仁豪
• Other Authors: Tsung-Lung Li
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/92739368315904563539

碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 94 === The present paper mainly was used the microwave plasma enhanced-chemical vapor deposition(MP-CVD) growing carbon nanotube (CNTs) by (Ni) the array (10μm x 10μm) and different spaces (20μm、15μm、10μm、5μm) with four different metals (TiN，Ti，Ta) to be the barrier layer。 The advantage used MP-CVD in the catalyzed metal (Ni) the array to grow the high density and vertically aligned CNTs。Then changed diverse parameters to grow CNTs and compared field emission characteristic by penetration vacuum electric properties measurement system measured field emission properties，the scanning electron microscope (SEM) to visit the appearance of carbon nanotube。And the Raman spectrum to obtain D-band and G-band, two area compare by a type, if the degree more greatly graphitization is better。 By the experiment we can suppose that higher temperature or higher microwave power cause better degree of graphitization。Degree of graphitization:TiN ＞Ta＞Ti，Diameter of CNTs:TiN＞Ta＞Ti。Field emission properties: Ti ＞Ta＞TiN。