Study of Sol-gel semiconductor material for TFTs application
碩士 === 國立中山大學 === 光電工程研究所 === 94 === ZnO (Zinc-oxide) is a wide bandgap (Eg~3.3 ev ) semiconductor material , it is transparent in the visible region of the spectra and therefore, also less light sensitive. ZnO-based TFT can increase the field mobility, improve the opening of AMLCD pixel and the pro...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/00400811199968116749 |
id |
ndltd-TW-094NSYS5124036 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-094NSYS51240362016-05-27T04:18:59Z http://ndltd.ncl.edu.tw/handle/00400811199968116749 Study of Sol-gel semiconductor material for TFTs application 以溶膠-凝膠半導體材料於薄膜電晶體之應用與研究 Cheng-hong Yu 余承鴻 碩士 國立中山大學 光電工程研究所 94 ZnO (Zinc-oxide) is a wide bandgap (Eg~3.3 ev ) semiconductor material , it is transparent in the visible region of the spectra and therefore, also less light sensitive. ZnO-based TFT can increase the field mobility, improve the opening of AMLCD pixel and the problem of photo-excited leakage current. Here we demonstrate ZnO-based TFT which was fabricated by sol-gel material through spin-coating deposition method. The process of spin-costing deposition provides a more efficient way for depositing device components and low cost than vacuum techniques. In the experiment we controlled the conductive and carrier concentration by different annealing temperature and different annealing equipment for optimizing our device characteristic. The material analysis of ZnO film is discussed by FTIR, SEM, and n&k. The electrical characteristic was measured by the I-V measurement system. Ting-Chang Chang 張鼎張 2006 學位論文 ; thesis 56 en_US |
collection |
NDLTD |
language |
en_US |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立中山大學 === 光電工程研究所 === 94 === ZnO (Zinc-oxide) is a wide bandgap (Eg~3.3 ev ) semiconductor material , it is transparent in the visible region of the spectra and therefore, also less light sensitive. ZnO-based TFT can increase the field mobility, improve the opening of AMLCD pixel and the problem of photo-excited leakage current. Here we demonstrate ZnO-based TFT which was fabricated by sol-gel material through spin-coating deposition method. The process of spin-costing deposition provides a more efficient way for depositing device components and low cost than vacuum techniques. In the experiment we controlled the conductive and carrier concentration by different annealing temperature and different annealing equipment for optimizing our device characteristic. The material analysis of ZnO film is discussed by FTIR, SEM, and n&k. The electrical characteristic was measured by the I-V measurement system.
|
author2 |
Ting-Chang Chang |
author_facet |
Ting-Chang Chang Cheng-hong Yu 余承鴻 |
author |
Cheng-hong Yu 余承鴻 |
spellingShingle |
Cheng-hong Yu 余承鴻 Study of Sol-gel semiconductor material for TFTs application |
author_sort |
Cheng-hong Yu |
title |
Study of Sol-gel semiconductor material for TFTs application |
title_short |
Study of Sol-gel semiconductor material for TFTs application |
title_full |
Study of Sol-gel semiconductor material for TFTs application |
title_fullStr |
Study of Sol-gel semiconductor material for TFTs application |
title_full_unstemmed |
Study of Sol-gel semiconductor material for TFTs application |
title_sort |
study of sol-gel semiconductor material for tfts application |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/00400811199968116749 |
work_keys_str_mv |
AT chenghongyu studyofsolgelsemiconductormaterialfortftsapplication AT yúchénghóng studyofsolgelsemiconductormaterialfortftsapplication AT chenghongyu yǐróngjiāoníngjiāobàndǎotǐcáiliàoyúbáomódiànjīngtǐzhīyīngyòngyǔyánjiū AT yúchénghóng yǐróngjiāoníngjiāobàndǎotǐcáiliàoyúbáomódiànjīngtǐzhīyīngyòngyǔyánjiū |
_version_ |
1718284103017562112 |