Investigation of the linewidth reduction effect of Photoluminescence spectra from silicon nanostructures

• Main Authors: Han-Wei Wu, 吳涵暐
• Other Authors: Ching-Fuh Lin
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/59324075577207535705

碩士 === 國立臺灣大學 === 光電工程學研究所 === 94 === Silicon light source is the most urgently needed device in the VLSI nowadays, and will play an important role in science and in technology. The aim of this thesis is to research through what mechanism and how the silicon nanostructures affect the luminescence spectra of silicon under low temperature. Nanostructures on silicon are found to contribute to the reduction of the linewidth of its photoluminescence (PL) spectrum under low temperature. We created variant silicon nanostructures on the surface silicon wafer, inclusive of silicon nanopillar structure and silicon nanoparticles layer. The effects of the devices with silicon nanostructures are suspected to the reduct of the linewidth, to increase the relaxation time of excitons and to lower the energy of continuum excitons after theoretical simulation. In addition, excitons are bosons and obey the Bose-Einstein distribution, thus under low temperature and the carrier confinement effects of the nanostructures, mass excitons will concentrate at the lowest energy level. The linewidth reduction effect might take place and the excitons might concentrate at higher temperature under the effects of the silicon nanostructures with more compact sizes and more regular arrangement.