Tunnel Magnetoresistance Under Proximity Effect in NiFe/CoFe/Al2O3/CoFe/Nb

碩士 === 國立臺灣大學 === 物理研究所 === 94 === Abstract The magnetic tunnel junctions (MTJs) are consisted of ferromagnet/insulator/ferromagnet (FM/I/FM). Tunnel magnetoresistance (TMR) is strongly influenced by the electronic and magnetic properties at the FM/I interface. Considering the proximity effect in...

Full description

Bibliographic Details
Main Authors: Li-Wei Kuo, 郭力維
Other Authors: Minn-Tsong Lin
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/96964034609213519083
Description
Summary:碩士 === 國立臺灣大學 === 物理研究所 === 94 === Abstract The magnetic tunnel junctions (MTJs) are consisted of ferromagnet/insulator/ferromagnet (FM/I/FM). Tunnel magnetoresistance (TMR) is strongly influenced by the electronic and magnetic properties at the FM/I interface. Considering the proximity effect in ferromagnet/superconductor (FM/SC), we sputtered Nb on the top FM layer of pseudo spin-valve (PSV) magnetic tunnel junctions to observe how the superconducting Nb influences the FM layer. With the help of the contrast experiment, we find that the resistance of the antiparallel state maybe influenced by Nb and it becomes lower below the superconducting transition temperature (Tc). However, the resistance in paralleled state is not significantly influenced by Nb, resulting in the decrease of TMR values. In the thickness dependence of Nb, we find that TMR is not apparently influenced in SC state as the thickness of Nb is below 100 nm. Comparing with that in the case of 500 nm Nb thickness, the TMR value shows retarding decrease as cooling through Tc for those of Nb thickness between 150 nm and 250 nm.