Optical characteristic of Si/SiGe heterostructure with strain in Si
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === Abstract Silicon/silicon germanium (Si/SiGe) heterostructures with strain presented in the Si layer has attracted great attention in recent years due to its high mobility in the channel of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The structure...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80648370903690088097 |