Synthesis and Optical Characterizations of GaN Nanostructures
碩士 === 東海大學 === 物理學系 === 94 === In this thesis, combining vapor phase transport technology with metal-catalyzed the growth of GaN nanostructure onto silicon substrate is the main purpose. In this study, 5nm-thick Au thin film used as catalyst for synthesizing nanowires was sputtered onto monocrystal...
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ndltd-TW-094THU001980052016-06-01T04:14:00Z http://ndltd.ncl.edu.tw/handle/71854436130381229135 Synthesis and Optical Characterizations of GaN Nanostructures 氮化鎵奈米結構之合成及光學特性分析 Wei-Chun Chan 詹惟淳 碩士 東海大學 物理學系 94 In this thesis, combining vapor phase transport technology with metal-catalyzed the growth of GaN nanostructure onto silicon substrate is the main purpose. In this study, 5nm-thick Au thin film used as catalyst for synthesizing nanowires was sputtered onto monocrystalline silicon(100). Solid source of gallium, NH3, N2, C2H2 gases were used as Ga, N, and C precursors respectively, and H2 used to carry O on N2 gas and solid source Ga. By making use of the 2-steps to grow GaN-GaN@CNT heterostructure nanowires. The structural characteristic of the material was examined with scanning transmission electron microscope, PL spectra and X-ray powder diffraction. In addition, we attempt to synthesize GaN quantum dots by using vapor phase transport. We still sputter Au on silicon(100) as catalyst for synthesizing quantum dots. Solid source of gallium, NH3, N2 gases were used as Ga, N, and H2 used to carry O on N2 gas and solid source of gallium. The structural characteristic of the material was examined with scanning transmission electron microscope and photoluminescence spectra. Hsi-Lien Hsiao 蕭錫鍊 2006 學位論文 ; thesis 65 zh-TW |
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碩士 === 東海大學 === 物理學系 === 94 === In this thesis, combining vapor phase transport technology with metal-catalyzed the growth of GaN nanostructure onto silicon substrate is the main purpose.
In this study, 5nm-thick Au thin film used as catalyst for synthesizing nanowires was sputtered onto monocrystalline silicon(100). Solid source of gallium, NH3, N2, C2H2 gases were used as Ga, N, and C precursors respectively, and H2 used to carry O on N2 gas and solid source Ga. By making use of the 2-steps to grow GaN-GaN@CNT heterostructure nanowires. The structural characteristic of the material was examined with scanning transmission electron microscope, PL spectra and X-ray powder diffraction.
In addition, we attempt to synthesize GaN quantum dots by using vapor phase transport. We still sputter Au on silicon(100) as catalyst for synthesizing quantum dots. Solid source of gallium, NH3, N2 gases were used as Ga, N, and H2 used to carry O on N2 gas and solid source of gallium. The structural characteristic of the material was examined with scanning transmission electron microscope and photoluminescence spectra.
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Hsi-Lien Hsiao |
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Hsi-Lien Hsiao Wei-Chun Chan 詹惟淳 |
author |
Wei-Chun Chan 詹惟淳 |
spellingShingle |
Wei-Chun Chan 詹惟淳 Synthesis and Optical Characterizations of GaN Nanostructures |
author_sort |
Wei-Chun Chan |
title |
Synthesis and Optical Characterizations of GaN Nanostructures |
title_short |
Synthesis and Optical Characterizations of GaN Nanostructures |
title_full |
Synthesis and Optical Characterizations of GaN Nanostructures |
title_fullStr |
Synthesis and Optical Characterizations of GaN Nanostructures |
title_full_unstemmed |
Synthesis and Optical Characterizations of GaN Nanostructures |
title_sort |
synthesis and optical characterizations of gan nanostructures |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/71854436130381229135 |
work_keys_str_mv |
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1718285961156100096 |