砷化鎵同質接面太陽電池之液相磊晶成長研究

• Main Authors: Chou,Chia-Hui, 周家輝
• Other Authors: Kuei,Ping-Yu
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/80996465143950870240

碩士 === 國防大學中正理工學院 === 電子工程研究所 === 95 === Due to the crisis of energy and the emphasis of environmental consciousness, it is increasingly important to investigate the energy resources for the human-being and the creatures on the earth. Thus, the theories and the ways of applications of solar cell are successively being investigated for the reason of having high conversion efficiency and good radiation-resistance for GaAs solar cell. The growth of n-type and p-type GaAs epilayers on the GaAs substrate by liquid phase epitaxy(LPE) technique are cautiously applied in my experiment, and GaAs homo-junction solar cells are also carefully being examined and investigated. Te and Zn are the doping sources. As for the parts of the GaAs epilayers, we do revise and well-control different weights of the sources to narrowly research the surface, carrier concentration, film thickness, optical property and lattice-match for GaAs epilayers. We also seriously concern with the conversion efficiency of GaAs homo-junction solar cells. Under the good condition of radiation-resistance of GaAs, we are able to apply the technique to the fabrication of GaAs solar cell in the future, such as becoming the most important electrical source of satellite.