Research of Q-switched Laser scribing of Mo Contact Thin Films for Solar Cell

• Main Authors: Hsu Sheng-Hung, 許勝宏
• Other Authors: Nen-Wen Pu
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/92865591243043163767

碩士 === 國防大學中正理工學院 === 應用物理研究所 === 95 === This study investigates pulsed laser scribing of Mo back contact layer in thin film solar cells. A home-made Q-switched Nd:YVO4 laser and a Quantel commercial Nd:YAG laser have been used. The Nd:YVO4 laser has a of wavelength of 1064 nm, a pulse width of 130 ns, and a repetition rate of 1 MHz. The Nd:YAG laser has a of wavelength of 1064 nm, a pulse width of 4 ns, and a repetition rate of 20 Hz. The controlling parameters in this research are laser energy density, velocity of motion stage and defocusing distance. The electrical resistance and ridge height were compared quantitatively after scribing. In addition, the patterns of scribes were studied using optical microscope, scanning electron microscope, and stylus profilemeter. The scribing performances of these two lasers were compared. In addition, we also studied the effects of substrate material on scribes of Mo films (Si and glass substrates were used). The best scribing conditions were found to be: Mo film deposited on glass substrate, scribing by Nd:YAG laser focused to a fluence of 3.14 J/cm2, with a slight defocusing by 1 mm(focal length=50 mm).