| Summary: | 碩士 === 國立中正大學 === 電機工程所 === 95 === A research of CMOS BSIM4 DC and RF model parameters and power MOS transistor is investigated in this thesis. In the first part, a set of DC test devices which is fabricated by using TSMC 0.35 μm CMOS technology is designed for the BSIM4 CMOS DC model parameters extraction. It employs eight designs in the test set for measurement that all of the devices are implemented based on the design rule of TSMC 0.35 μm CMOS technology to obtain the reasonable BSIM4 DC model parameters. By the aid of extraction software ICCAP-2006A, the DC model parameters of 0.35 μm CMOS technology were extracted. A single-finger and multi-finger high-frequency devices are used to extract the RF model parameters in the second part. The DC model parameters in the first part will be also included to derive the RF model parameters. Some of calibration kits for de-embedded are used to verify the measured S-parameters and small-signal characteristic. Following the two steps, the BSIM4 RF model parameters will be obtained. The last part is a design of CMOS power cell. There are four devices with different sizes being built up of which are measured by a load-pull system for the output power, efficiency , power gain and the optimal impedance for load and source terminals.
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