The Ultra-Wideband Transmitter Designs of Power Amplifier and T/R Switch

• Main Authors: Tony Lu, 盧冠達
• Other Authors: Shuenn-Yuh Lee
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/73945432464556663264

碩士 === 國立中正大學 === 電機工程所 === 95 === This thesis aim is to design an ultra-wideband CMOS RF transmitter front-end using TSMC CMOS RF 0.18um 1P6M process. There are several RF components which include UWB power amplifier, UWB T/R switch. The UWB PA with a Differential to Single-Ended converter (DSC) has been implemented. Both the cascode structure and two-stage amplifier are adopted to increase the bandwidth, gain and gain flatness. The UWB T/R switch is using body floating to improve SPDT structure. The UWB T/R switch is low insertion loss by body floating technology. The measurements have shown this PA provides an average power gain of 10dB and P1dB of above 0dBm in the frequency range from 3.1GHz to 7GHz, respectively. Moreover, the PAE is 11% at 4GHz under the power consumption of 60mW.The switch measurements has shown that TX insertion loss is -2.1~ -3.5dB , RX insertion loss is -2.1~ -3.4dB ,isolation is lower than -24dB,TX and RX return loss are lower than -21dB, ANT return loss is lower than -17dB in the frequency from 3.1GHz to 10.6GHz.