Effect of Processing Conditions of Electrolysis Modified Co-Precipitation on the Characteristics of Transparent Conductive Aluminum Zinc Oxide Materials

碩士 === 長庚大學 === 化工與材料工程研究所 === 96 === The objective of this research are to prepare powder of aluminum zinc oxide(AZO) by electrolysis modified co-precipitation method, to produce AZO sputtering targets through ceramic processing using these powders, and to deposit n-type transparent conducting AZO...

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Bibliographic Details
Main Authors: Chia-wei Li, 李珈蔚
Other Authors: Hsin-Chun Lu
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/25552867832290676655
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Summary:碩士 === 長庚大學 === 化工與材料工程研究所 === 96 === The objective of this research are to prepare powder of aluminum zinc oxide(AZO) by electrolysis modified co-precipitation method, to produce AZO sputtering targets through ceramic processing using these powders, and to deposit n-type transparent conducting AZO thin films by RF magnetron sputtering. In addition, the effects of the electrolysis parameters and the sputtering process conditions on the characteristics of the powders, targets, and sputter-deposited thin films are also investigate. From the experiment results, it was shown that crystalline AZO powders could be prepared by calcining at 1000℃ for two hours the precursor precipitates that were electrolysis modified co-precipitated at pH=8, washed, filtered, and dried. AZO targets with theoretical density around 95% and electrical resistivity at 1.65×10-2Ω-cm could also be prepared from these AZO powders through ball-milling, granulation, dry processing, cold isostatic pressing, de-waxing, and sintering processes. It was also found the process conditions of electrolysis had influence not only on the properties of the precipitates but also on the characteristics of the calcined AZO powders and sintered AZO targets. The optical transmittance and electrical resistivity through RF sputtering parameter at substrate temperature 300℃, working pressure 6×10-3torr, sputtering power 60W, O2/( Ar+ O2) =20% of the transparent thin films doposited from the AZO targets were above 80% and 6.72×10-2Ω-cm.