Study of Hafnium(Hf) and Gadolinium (Gd) Nanocrystal Flash Memory with Rapid Thermal Annealing Treatment
碩士 === 長庚大學 === 電子工程研究所 === 95 === Poly-silicon has been used as the charge trap/storage layer in floating gate flash memory for a long time. Poly-silicon is a very reliable material and is fully compatible with the current CMOS process flow. However, poly-silicon shows some intrinsic disadvantages...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69830188611430566954 |