| Summary: | 碩士 === 中華技術學院 === 機電光工程研究所碩士班 === 95 === The research is mainly to grow single crystal of quartz by hydrothermal method. In the course of studying, the parameters control to analyze the influence for growth rate of crystal. The growth of single crystal quartz by hydrothermal method must be under the environment of the high temperature and pressure. The study is used as ANSYS simulation to analyze the characteristics of stress, strain and heat flow within the autoclave under the high temperature and pressure. The result can be the safety basis for growth of quartz by hydrothermal method.
The influence of growth rate and crystal quality includes growth temperature, growth pressure, mineralizer concentration, filling rate, baffle opening rate and growth time in the course of growth quartz. This research is set as the conditions with different baffle opening rates. The result shows that the baffle opening rate of 2.5% to 3.0% obtains the fast growth rate. After growth, the quartz is to be observed by optics microscope and the result shows the reduction of grain boundary and increase of crystalline grain. The long time it grows, the single crystal quartz is obtained.
Keyword：single crystal quartz, hydrothermal method, autoclave, baffle opening rate, ANSYS simulation
|
|---|
