The Optoelectronic Characteristic of Metal-Oxide-Semiconductor(MOS) Structure with Nano Oxide

• Main Authors: Jun-Hung Lin, 林俊宏
• Other Authors: Jun-Dar Hwang
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/57649723857371378036

碩士 === 大葉大學 === 電機工程學系 === 95 === Silicon dioxide layer with nano-particle has been spin on Si thin film for the first time. In material analysis, the field emission scanning electron microscope(FE-SEM), energy dispersion X-ray element spectrometer(EDS),and electron spectroscopy for chemical analysis(ESCA) were measured to analyze grain-size, composition, and chemical bonding of silicon dioxide. In addition, silicon dioxide was annealed at 300 ~ 500 0C for 30 minutes. We found that annealing can harden the silicon dioxide and decrease leakage current; then, the metal-oxide-semiconductor photodetectors (MOS-PDs) were fabricated. The electrical- and photo-response (850nm；632nm) were investigated for our MOS-PDs.