Optical and Electrical Properties of Silicon Based MILC PN Junction Diode

• Main Authors: Kun-Shu Li, 李坤樹
• Other Authors: Jun-Dar Hwang
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/66335600129001260230

碩士 === 大葉大學 === 電機工程學系 === 95 === Recently, polycrystalline silicon (Poly-Si) has received increasing attention because of its wide range application, such as Thin Film Transistor (TFT) for liquid crystal display, solar cell and image sensors. The growth methods of Poly-Si include (1) Solid Phase Crystallization (SPC) (2) Excimer Laser Annealing (ELA) (3) Metal-Induced Crystallization (MIC). However, SPC method have high growth temperature (above 700℃), resulting in fused quartz or silicon substrate is needed, which is high cost. The ELA method is expensive and cannot mass production due to laser annealing. In this experiment, we deposited the hydrogenated amorphous silicon (a-Si:H) films by Plasma-enhanced chemical vapor deposition (PECVD) system; then, the metal-induced lateral crystallization (MILC) of hydrogenated amorphous silicon (a-Si:H) thin films was processed having various thicknesses of nickel (Ni) films (10~25nm) at 550℃.The n-type Poly-Si film was grown on p-Si subatrate by using MILC method; then, a p/n junction solar cell was fabricated. It was found that the Poly-Si films prepared by MILC method have a nano- grain size of about 20~ 65 nm. The MILC method was treated by using RTA system at 550℃ for 6 hours. The optimal crystallization was achieved in the samples having 20 nm thick Ni films. The ratio of photo-to-dark-current ratio was 23, and the measured conversion efficiency of the solar cell was 6.1% by AM1.