The Fabrication of Carbon Nanotube and Its Application for Field Emission Device

碩士 === 義守大學 === 電子工程學系碩士班 === 95 === In this article, carbon nanotubes (CNTs) grow on catalyst-printed substrates by thermal chemical vapor deposition (T-CVD). This technique provides with simple process and low cost properties for CNT growth. It is possible to easy pattern and mass production of CN...

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Bibliographic Details
Main Authors: Chun-Chang Lin, 林俊璋
Other Authors: Mesio Yokoyama
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/74615159925789517135
Description
Summary:碩士 === 義守大學 === 電子工程學系碩士班 === 95 === In this article, carbon nanotubes (CNTs) grow on catalyst-printed substrates by thermal chemical vapor deposition (T-CVD). This technique provides with simple process and low cost properties for CNT growth. It is possible to easy pattern and mass production of CNT growth. And then CNTs could be applied on the manufacture of field emission device (FED). In screen printing manufacturing, iron nitrate paste concentration influenced nucleus reaction and distribution of CNTs. By adjusting the temperatures, one can control the diameter and the morphology of the CNTs. After 20 min pretreatment of Fe catalyst in H2, Fe catalyst were etched with H2, resulting in a high density of iron particles as nucleus sites, which reacted sufficiently with carbonaceous source to grow a great quantity of CNTs. Therefore, utilizing screen printing technology not only provides easy pattern catalyst film, but also a large area substrate to mass production CNTs. The CNT paste was prepared by mixing CNT powders with organic solvents (i.e. Terpineol) and resins (i.e. Ethyl cellulose). Field emission cathode was fabricated by screen printing the CNT paste on the indium-tin oxide (ITO) coated glass. FED is in a diode configuration, the anode formed by evaporated phosphor powder (ZnS:TbOF) and the cathode formed of CNTs. By adjusting time of UV Ozone, the field emission characteristics were improved effectively. The current density of the FED is as high as 10 mA/cm2 at the field of 1.2 V/μm.