| Summary: | 碩士 === 義守大學 === 機械與自動化工程學系碩士班 === 95 === Change with each passing day quickly along with science and technology, cellular phone, PDA, wireless network …etc. Personal communication science and technology product booming development, the then high frequency devices is also along with the need of the market and doubly. There are solidity small, the material is adamant and goodness piezoelectricity, the high surface acoustic wave goodly, high electromechanical coupling coefficient etc. The surface acoustic wave filter component as a result become rather popular. The reactive RF Magentron Sputtering System technique was employed in this study. Depends the piezoelectric property of aluminum nitride(AlN) thin film,and depends the allomerism crystalline structure electrode to manufacture it’s acoustic wave devices.First, depends allomerism crystalline structure electrode on P type （100）silicon sustrate.face-centered cubic（FCC）：Al；body-centered cubic（BCC）：Mo. By way of XRD、SEM、AFM analyzed and choice better of parameter, depends the piezoelectric property of aluminum nitride(AlN) thin film have good c-axis orientation crystalline structure on allomerism crystalline structure electrode. To use XRD、SEM、AFM analyzed crystalline the structure and property.Final, fabrication acoustic wave devices to measurement piezoelectricity of different temperature by network analyzer.
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