Preparation of YAG phosphor and improvement in photoluminescence property by conductive coating

碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 95 === In the study, the Y3Al5O12 (YAG) phosphor was synthesized by the solid-state sintering method. The activators were europium (Eu), manganese (Mn) and cerium (Ce) elements. The studying subject is divided into two parts. One is to study the optimum prepar...

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Bibliographic Details
Main Authors: Ching-Yi lu, 盧清一
Other Authors: Su-Hua Yang
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/34110933371015911479
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Summary:碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 95 === In the study, the Y3Al5O12 (YAG) phosphor was synthesized by the solid-state sintering method. The activators were europium (Eu), manganese (Mn) and cerium (Ce) elements. The studying subject is divided into two parts. One is to study the optimum preparation parameter of the YAG phosphor doped with activators, and the other is to coat the YAG: Ce phosphor with acetates to increase the conductivity and enhance the luminescence property of phosphor. At first, the doping concentrations of rare-earth elements were changed to find the optimum doping concentration of the activator. The sintering time, frequencies and sintering temperature were changed to study the influence of preparation parametors on the property of phosphor. The zinc acetate (Zn (CH3COO)2 ) and indium acetate ( In(CH3COO)3 ) were coated and used as conduction layer of YAG:Ce phosphor to improve the luminescence property of phosphor. The effect of acetate coating on structure and luminescence property of phosphor was discussed. In this study, we find that the sintering time, frequencies and temperature influenced the crystal structure and luminescent property of the phosphor. The doping concentration and coating material influenced the luminescent property of the phosphor as well. In PL measurements, it was found that when the excitation wavelength was set at 460 nm with the excitation source of Xeon lamp. The emission peak was at 520 nm no matter the preparation parameters were raised.