Design and Study of Infrared Micro-Emitter Fabricated on (111)-Oriented Silicon Wafer

• Main Authors: Mu-Kai Kang, 康沐楷
• Other Authors: Chung-Nan Chen
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/78239865445061787188

碩士 === 國立高雄應用科技大學 === 光電與通訊研究所 === 95 === As a result of the good mechanical properties and the excellence of non-residual stress of single crystal silicon (c-Si), my research focused on the design of suspended c-Si microstructures on (111)-oriented silicon wafer for micro-emitter applications. In our work, suspended c-Si microstructures were successfully fabricated by double ICP process. After the process of ICP, we found that the sidewall film deposited by PECVD was easily etched by etchant. We proposed a LOCOS method to protect the sidewall from etching. In addition, we also present theoretical analysis of heat transfer power consumption, and power conversion efficiency of the micro-emitters. At 700℃ , the total thermal conductance is 49.5μW/K. The thermal solid conductance is 43.3μW/K. It’s clear that the domain effect of heat transfer is thermal solid conductance. And the power consumption of the component is 33.75 mW, the radiation power is 4.4mW. We found the power conversion efficiency is about 13%. Compare with other devices, the thermal solid conductance reduced about 300μW/K and the total power consumption decreased about 200mW. Therefore, the power conversion efficiency could improve 1.3~10 times.