| Summary: | 碩士 === 中興大學 === 物理學系所 === 95 === We successfully fabricated multi-electrode devices on GaN nanowires (NWs) and extracted the low-frequency noise of GaN NWs by cross-spectrum technique.
From results of cross-spectrum measurement, we found that the noise of GaN NWs is much smaller than contact noise. It also indicates that the improvement of the ohmic contact can reduce the noise magnitude of GaN NWs devices.
According to the temperature-dependence measurement, we can obtain the activation energy, Ea , from the Arrhenius plot of the characteristic time, τ, associated with the Lorentzian noise. Ea is around 270meV from 215K to 300K, and 320meV from 145K to 205K, respectively.
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