An investigation of the effects of fixed abrasive chemical mechanical polishing to shallow trench isolation process

• Main Authors: Chin-chung Wei, 魏清忠
• Other Authors: Jung-Hua Chou
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/09326768543061965596

碩士 === 國立成功大學 === 工程科學系專班 === 95 === At present, chemical mechanical polishing (CMP) is the most effective technology to achieve global planarization in semiconductor manufacturing processes. In recent years, the feature size of the IC processes is down to the nanometer range. Because the interconnect and electrode patterns are defined by masks, the wafer global planarization is very important. Without CMP, it is extremely difficult to focus in the unsmooth wafer surface. Furthermore, the connection between each electric circuit also needs suitable planarization, otherwise the interconnections may be short or cause leakage currents. Thus, CMP plays an extremely important role in the IC manufacturing industry. The purpose of this study is to investigate the effects of the important fixed abrasive polishing (FACMP) parameters and consumables for the shallow trench isolation process. From the parameters, consumables and Taguchi DOE methods, the best polishing performance is obtained. The experimental results not only improve the double removal rate for polishing but also 6% uniformity performance