Investigation of Emitter Ledge Structures and Surface Passivation Effects on Heterojunction Bipolar Transistors (HBTs)
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === In this dissertation, the influences of various emitter-ledge thickness and length on the InGaP/GaAs heterojunction bipolar transistors performance are investigated based on the simulation and experimental data. The undesired surface channel phenomenon at th...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/60859392186373425915 |