The Study of III-V Epitaxial Material on Si Substrates for High-Speed Electronic and Optoelectronic Applications
博士 === 國立交通大學 === 材料科學與工程系所 === 95 === In this dissertation, GexSi1-x metamorphic buffer layers were used for the growth of the III-V material on the Si substrate. Using Ge/GexSi1-x metamorphic structure as the buffer layer, the thermal expansion mismatch and the lattice mismatch problems of the int...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94084753754364312105 |