Study on fundamental properties of ZrZnO-based TFT by Sol-Gel process

• Main Authors: Shiou-Jiuan , Shiau, 蕭秀娟
• Other Authors: Po-Tsun Liu
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/85183702925579648429

碩士 === 國立交通大學 === 顯示科技研究所 === 95 === ZnO (Zinc-oxide) is a wide bandgap (Eg~3.37ev ) semiconductor material , it is transparent in the visible region of the spectra and therefore , also less light sensitive . ZnO based - TFT can increase the field mobility,improve the opening of AMLCD pixel and the problem of photo-excited leakage current . ZrZnO based - TFT was fabricated by sol-gel . Sol-Gel is a spin-on-deposition technology. We can use this way to form ZrZnO thin film in the room temperature (RT) and room pressure (RP) environment. After spin-costing deposition , we improve the ZrZnO based -TFT character by the method of different annealing temperature and different film thickness . Then , in order to improve the channel / dielectric interface , we describe the introduction of a HfOx capping layer onto the SiNx films to get a good ZrZnO baced -TFT devices. Finally , the material analysis of ZrZnO film is discussed by SEM、AFM、N&K、FTIR、XRD and XPS .The electrical characteristic was measured by the I-V measurement system.