Temperature dependence of large-signal model of pHEMTs
碩士 === 國立中央大學 === 電機工程研究所 === 95 === GaAs pHEMT device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies. It is very important to accurately model the dc and high frequency characteristics of the transistors befor...
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ndltd-TW-095NCU054420482015-11-09T04:04:49Z http://ndltd.ncl.edu.tw/handle/17929401100697126813 Temperature dependence of large-signal model of pHEMTs 假形高電子遷移率電晶體之溫度變化大訊號模型 Cheng-Hung Hsieh 謝政宏 碩士 國立中央大學 電機工程研究所 95 GaAs pHEMT device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies. It is very important to accurately model the dc and high frequency characteristics of the transistors before you design a MMIC circuit composed of these transistors. This thesis contains both the small-signal and large-signal modeling methods of GaAs pHEMTs. Utilizing Yang-Long DC measurement and Cold FET high frequency measurement method, extrinsic parameters of device can be extracted. And then using matrix operation to obtain intrinsic parameters of device, and finally set up the small-signal equivalent model of transistor. Moreover, using EEHEMT1 model and related temperature parameters, the equivalent model with divinable characteristics of device at variable temperature can be established. This large signal model can fits well to measured data, including DC and high frequency characteristics, at room temperature and high temperature (125 °C). 辛裕明 2007 學位論文 ; thesis 81 zh-TW |
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碩士 === 國立中央大學 === 電機工程研究所 === 95 === GaAs pHEMT device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies. It is very important to accurately model the dc and high frequency characteristics of the transistors before you design a MMIC circuit composed of these transistors.
This thesis contains both the small-signal and large-signal modeling methods of GaAs pHEMTs. Utilizing Yang-Long DC measurement and Cold FET high frequency measurement method, extrinsic parameters of device can be extracted. And then using matrix operation to obtain intrinsic parameters of device, and finally set up the small-signal equivalent model of transistor. Moreover, using EEHEMT1 model and related temperature parameters, the equivalent model with divinable characteristics of device at variable temperature can be established. This large signal model can fits well to measured data, including DC and high frequency characteristics, at room temperature and high temperature (125 °C).
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author2 |
辛裕明 |
author_facet |
辛裕明 Cheng-Hung Hsieh 謝政宏 |
author |
Cheng-Hung Hsieh 謝政宏 |
spellingShingle |
Cheng-Hung Hsieh 謝政宏 Temperature dependence of large-signal model of pHEMTs |
author_sort |
Cheng-Hung Hsieh |
title |
Temperature dependence of large-signal model of pHEMTs |
title_short |
Temperature dependence of large-signal model of pHEMTs |
title_full |
Temperature dependence of large-signal model of pHEMTs |
title_fullStr |
Temperature dependence of large-signal model of pHEMTs |
title_full_unstemmed |
Temperature dependence of large-signal model of pHEMTs |
title_sort |
temperature dependence of large-signal model of phemts |
publishDate |
2007 |
url |
http://ndltd.ncl.edu.tw/handle/17929401100697126813 |
work_keys_str_mv |
AT chenghunghsieh temperaturedependenceoflargesignalmodelofphemts AT xièzhènghóng temperaturedependenceoflargesignalmodelofphemts AT chenghunghsieh jiǎxínggāodiànziqiānyílǜdiànjīngtǐzhīwēndùbiànhuàdàxùnhàomóxíng AT xièzhènghóng jiǎxínggāodiànziqiānyílǜdiànjīngtǐzhīwēndùbiànhuàdàxùnhàomóxíng |
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1718126504378892288 |