Temperature dependence of large-signal model of pHEMTs

• Main Authors: Cheng-Hung Hsieh, 謝政宏
• Other Authors: 辛裕明
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/17929401100697126813

碩士 === 國立中央大學 === 電機工程研究所 === 95 === GaAs pHEMT device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies. It is very important to accurately model the dc and high frequency characteristics of the transistors before you design a MMIC circuit composed of these transistors. This thesis contains both the small-signal and large-signal modeling methods of GaAs pHEMTs. Utilizing Yang-Long DC measurement and Cold FET high frequency measurement method, extrinsic parameters of device can be extracted. And then using matrix operation to obtain intrinsic parameters of device, and finally set up the small-signal equivalent model of transistor. Moreover, using EEHEMT1 model and related temperature parameters, the equivalent model with divinable characteristics of device at variable temperature can be established. This large signal model can fits well to measured data, including DC and high frequency characteristics, at room temperature and high temperature (125 °C).