| Summary: | 碩士 === 國立彰化師範大學 === 光電科技研究所 === 95 === The display technology of Top-emitting Organic Light-Emitting Diode (TOLED), together with the active matrix (AM) technique, can contend with Thin Film Transistor-Liquid Crystal Display (TFT-LCD) in the market of large size display. The TOLED devices have more advantages in the capability of self-emission, flexibility, full colors, high brightness, high contrast, low power, viewing angle, and response time. The structural design of TOLED is a key point for mass production. In this thesis, the optimizations of the optical and electronic properties of TOLED devices are numerically studied.
In chapter 1, we introduce the characteristics of OLED, including the advantages and disadvantages of OLED devices and the advantages of TOLED with AM technique. Moreover, we searched and marshaled analysis of market-oriented economy and the trend of industry.
In chapter 2, we attempt to setup the electronic, optic, and micro-cavity model of TOLED. In this chapter, various kinds of material parameters are also defined to help realize the micrisecopic physics of TOLED.
In chapter 3, we investigate the carrier injection characteristics in TOLED. First, we investigate the optimum structure of semi-transparent cathode, the application of tri-layer structure, and the double buffer layers to lower the turn-on voltage.
The carrier balance at the interface between organic layers and the excitons which match up at the anti-node of standing wave affect the electroluminescence (EL) efficiency of TOLED. In chapter 4, we investigate the carrier distribution and EL efficiency of TOLED when the electron and hole blacking layers are included.
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