Preparation and Characterization of Lanthanoid-doped (K1-xBix)Bi4Ti4O15 Thin Films by Chemical Solution Deposition Method

• Main Authors: Ching-Long Chang, 張青龍
• Other Authors: Dong-Hau Kuo
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/kmzp48

碩士 === 國立東華大學 === 材料科學與工程學系 === 95 === In this study, ferroelectric (K1-xBix)Bi4Ti4O15 thin films with x= 0.4, 0.45, 0.5, and 0.55 or KBT-x films, a modification of SrBi4Ti4O15 by substituting Sr with (K1-xBix), were prepared by the chemical solution deposition and investigated. Furthermore, the A-site substituted ( K0.5Bi0.5 )(Bi4-yLny)Ti4O15 films with Ln= Nd and La were also produced to understand the effect of the Ln substitution on performance. To find the best annealing condition, the KBT films with a K/Bi ratio of 0.5/0.5 were evaluated at different temperatures and duration. An annealing condition of 600oC-30 min in nitrogen was identified to be useful in obtaining single-phase KBT and in performing better properties. KBT films with different x values were annealed at the pre-determined annealing condition of 600oC-30 min in nitrogen. The KBT films with x = 0.4 or 0.45 or the Bi-deficient KBT films did not have the improved performance. Their remnant polarization (2Pr) and coercive field (Ec) were 55.9