| Summary: | 碩士 === 國立東華大學 === 電機工程學系 === 95 === This study is to analyze the factors impacting the performance of GaAs solar cells. Theoretical modeling of GaAs solar cells to study the quantum efficiency of cells is carried out. The fabrication and characterization of GaAs solar cells are conducted to study the responsible mechanisms of improving the device performance.
This research aims at constructing the theoretical models and performing the numerical simulations to determine the quantum efficiency of the single-junction GaAs solar cells. One of the research tasks is to optimize the thickness and Al ratio of AlxGa1-xAs of the window layers for GaAs solar cells. To calculate the quantum efficiency of the GaAs solar cell, the photocurrents in the quasi-neutral p-, n- and space charge regions are determined, and thus the total photon-generated current is obtained by the summation of the photocurrents in three regions. By tuning the thickness and doping density, the high short-circuit current density of the resulting GaAs solar cells could be achieved.
Effects of wide-gap window layers on the performance of GaAs solar cells are investigated. The performance parameters of solar cells such as the open-circuit voltage, short-circuit current density, fill factor, conversion efficiency, series resistance, and shunt resistance are determined and analyzed from the measured current-voltage results.
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