| Summary: | 碩士 === 國立中山大學 === 光電工程研究所 === 95 === The purpose of this thesis is to develop ring resonators with simple processes and integration. We used loop mirror as a reflector in the semiconductor lasers. In the material, a 1.55μm symmetric quantum well InGaAsP epi-layer is used to fabricate the lasers.
In device design, we designed four kinds of semiconductor lasers by using loop mirror and cleaved facet. The curvature radiuses are 160 and 260μm that are presented to investigate bending loss and material loss. In the input/output we had an inclined 7 degree to avoid interference. We also designed another two semiconductor lasers by using ring resonator and cleaved facet. Applying the resonance characteristic of ring resonator can achieve wavelength selection and filtering.
In fabrication process, we developed new etching technique. The ICP-RIE dry etching and wet etching method were used in the process. Fist we etched half of the total depth by ICP-RIE dry etching. And then the multi-step technique was used to approach the expecting depth. Beside, we had extra deep wet etching process in MMI. Finally, we used the etching solution HBr:HCl:H2O2:H2O =5:4:1:70 to smooth the sidewall and reduce the scattering loss.
In device characteristic, we obtained differential quantum efficiency of 20μW/mA for the 1000μm straight waveguide laser. We can not observe laser characteristics for the loop mirror laser, partly because of the high loss in bending section.
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