Characterization of AlGaN/GaN heterostructures grown by molecular beam epitaxy
碩士 === 國立中山大學 === 物理學系研究所 === 95 === In this paper we will discuss the characteristic of AlGaN/GaN heterostructure grown on sapphire by plasma-assisted molecular-beam epitaxy. In this series of samples, we try to change the ratio of buffer layer N/Al, the ratio from sample A to sample D is 43、26、23、...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9fapq6 |