An 1V CMOS RF Front-End with Variable Gain for WLAN Applications

碩士 === 國立清華大學 === 電機工程學系 === 95 === In this thesis, a RF front-end circuit which has low power consumption and low supply voltage for wireless LAN applications and another RF front-end with normal power consumption are presents. In the first design, it uses the folded-cascoded architecture to achiev...

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Bibliographic Details
Main Authors: Yi-Shou Chang, 張益壽
Other Authors: Jenn-Chyou Bor
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/15109055257333339998
Description
Summary:碩士 === 國立清華大學 === 電機工程學系 === 95 === In this thesis, a RF front-end circuit which has low power consumption and low supply voltage for wireless LAN applications and another RF front-end with normal power consumption are presents. In the first design, it uses the folded-cascoded architecture to achieve low-voltage operation. Based on the theoretic and simulation analysis, the trade-off between the power consumption and circuit performance is conducted. The overall circuit is designed and implemented in TSMC 0.18 μm process. The simulation results show that RF front-end has S11 small than -10 dB during the wanted bandwidth (5.15 GHz to 5.35 GHz). The conversion voltage gain has 28.1 dB and 23.3 dB. The double side band noise figure is 6.12 dB at 10 MHz and average noise figure is 9.42 dB within 10 MHz. The power consumption is 5.68 mW and it operates with 1V supply voltage. P1dB is -23.79 dBm and IIP3 is –18.01 dBm. The overall area is 1.270 * 1.432 mm2. In the second design, the RF front-end circuit has normal design specification. It doesn’t operate with low power consumption. So the performance is better then first one. The overall circuit is designed and implemented in TSMC 0.18 μm process. The simulation results show that front-end has S11 small than -10 dB during the wanted band. The conversion gain is 26.7 dB and 15.8 dB and it has about 9 dB gain range. The noise figure is 3.72 at 10 MHz. P1dB is -20.82 dBm and IIP3 is -8.27 dBm. The power consumption is 25.56 mW and it operates with 1.8 V supply voltage. The die area is 1.303 * 1.451 mm2.