Design and Fabrication of High-G Accelerometer

• Main Authors: Zhi-Xiang Liao, 廖致祥
• Other Authors: Chih-Wei Wu
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/96645545761447853829

碩士 === 國立臺灣海洋大學 === 機械與機電工程學系 === 95 === Micro Electro Mechanical System technology is very promising and has generated a significant amount of interest in the world. High-G MEMS accelerometers are desirable for many commercial and space applications. With the finite element analysis (FEA) software ANSYS, we have performed the stress analysis and mode analysis of the accelerometer structure, confirming stress force, max displacement, capacitance in the 10,000-G impacting condition, and ensuring the accelerometer to be secure, responsible and to work precisely, besides. In the study, a silicon direct bonding-silicon on insulator (SOI) wafer is adopted for the capacitive accelerometer and impact accelerometer. The thickness of the silicon mass is controlled by the polishing process, which gives a desirable thickness from hundreds of microns to sub-microns. The thick mass results in higher sensitivity and the beams with single-crystal silicon raise the reliability because they do not have hysteresis and creep. The accelerometers have been fabricated with MEMS technology compatible with IC processes. Various kinds of accelerometers could be integrated on the same chip. In this paper, the design, fabrication process and measurement characteristics of the accelerometers are described.